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IHY30N160R2

Infineon Technologies

Reverse conducting IGBT

www.DataSheet.co.kr IHY30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body di...


Infineon Technologies

IHY30N160R2

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www.DataSheet.co.kr IHY30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages Trench and fieldstop technology offers: - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI New TO-247HC package offers increased air & creepage distances compared to TO247 package Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Halogen free (according to IEC 61249-2-21) Complete product spectrum and PSpice models: http://www.infineon.com/igbt/ Applications: Inductive cooking Soft switching applications Type IHY30N160R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1600V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 µs, D < 0.01) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm ...




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