2SC1047

2SC1047 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL MT-100 CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A IC=4.0A,IB1=-IB2=0.4A,VCC=60V 1.5 0.35 MAX 160 140 12 100 3 2.0 1.0 UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 160 140 6 12 3 100 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=160V VEB=5V IC=1mA IC = 4.0A; IB = 0.4A IC = 1A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V,f=1MHZ IC=4A,IB1=-IB2=0.4A,VCC=60...