Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification For TV vertical deflection o...
Power
Transistors
2SB940, 2B940A
Silicon
PNP epitaxial planar type
For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
q q
16.7±0.3 14.0±0.5
q
High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –200 –200 –150 –180 –6 –3 –2 30 2 150 –55 to +150 Unit V 2SB940 2SB940A 2SB940
Collector to base voltage Collector to
emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.0
7.5±0.2
s Features
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A
(TC=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT
*
Conditions VCB = –200V, IE = 0 VEB = –4V, IC = 0 IC = –50µA, IE = 0 IC = –5mA, IB = 0 IE = –500µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –400mA VCE = –10V, IC = –400mA IC = –500mA, IB = –50mA VCE = –10V, IC = – 0.5A, f = 10MHz
min
typ
max –50 –50
Unit µA µA V V V
–200 –150 –180 –...