Document
TOSHIBA Photocoupler IRED + Photo IC
TLP700F
Industrial inverters Inverter for air conditioners IGBT/Power MOSFET gate drive
The TLP700F consists of an infrared LED and an integrated photodetector. This unit is 6-lead SDIP package. The TLP700F is 50% smaller than the 8pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP700F is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP700 is capable of “direct” gate driving of lowpower IGBTs.
4.58±0.25
654
123
+0.1 5 −0.2 5
6.8±0.25
TLP700F
Unit: mm 7.62±0.25
+0.2 5 −0.1 5
3. 9
+0.1 0 −0.0 5
3.65
0.25±
• Peak output current:
±2.0 A (max)
• Guaranteed performance over temperature: -40 to 100°C
• Supply current:
2.0 mA (max)
• Power supply voltage:
15 to 30 V
• Threshold input current:
IFLH = 5 mA (max)
• Switching time (tpLH / tpHL):
500 ns (max)
• Common mode transient immunity:
±15 kV/μs (min)
• Isolation voltage:
5000 Vrms (min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved: EN 60747-5-5 , EN 62368-1 (Note 1)
Note 1 : When a VDE approved type is needed, please designate the Option(D4).
• Construction mechanical rating
10.16-mm pitch TLPXXXF type
Creepage Distance Clearance Insulation Thickness
8.0 mm (min) 8.0 mm (min) 0.4 mm (min)
Truth Table
Input
LED
H
ON
L
OFF
M1 ON OFF
M2 OFF ON
Output H L
1.27±0.2 0.4±0.1
0.75±0.25 11.7±0.3
TOSHIBA
11-5J101S
Weight: 0.26 g (t yp .)
Pin Configuration (Top View)
1
2
3
SHIELD
6
1: ANODE
2: N.C
3: CATHODE
5
4: GND
5: VO ( OUTPUT )
4
6: VCC
Schematic
IF 1+ VF 3-
(M1)
ICC VCC
6
(M2)
IO
VO 5
SHIELD
GND 4
Note: A 0.1-μF bypass capacitor must be connected between pins 6 and 4.
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2007-08
2019-09-25
Absolute Maximum Ratings (Ta = 25 °C)
TLP700F
Characteristics
Symbol
Rating
Unit
LE D
Forward current
Forward current derating (Ta ≥ 85°C)
Peak transient forward current
(Note 1)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta ≥ 85 °C)
IF ∆IF/∆Ta
IFP VR PD ∆PD/∆Ta
20 -0.54
1 5 40 -1.0
mA mA/°C
A V mW mW/°C
Junction temperature “H” peak output current “L” peak output current
Ta=-40 to 100 °C (Note 2)
Tj IOPH IOPL
125
°C
-2.0
A
2.0
A
Detector
Output voltage
VO
35
V
Supply voltage Power dissipation
VCC PC
35
V
400
mW
Junction temperature
Tj
125
°C
Operating frequency
(Note 3)
f
50
kHz
Operating temperature range
Topr
-40 to 100
°C
Storage temperature range
Tstg
-55 to 125
°C
Lead soldering temperature (10 s)
(Note 4)
Tsol
260
°C
Isolation voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 5)
BVS
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temp.