2SB935

Power Transistors 2SB935, 2SB935A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 –5 –15 –10 35 1.3 150 –55 to +150 Unit V 2SB935 2SB935A 2SB935 5.08±0.5 1 2 3 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 emitter voltage 2SB935A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.7±0.5 4.4±0.5 0 to 0.4 V A A W 10.0±0.3 1.5–0.4 4.4±0.5 2.0 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 5.08±0.5 ˚C ˚C 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB935 2SB935A 2SB935 2SB935A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf IC = –2A, IB1 = –66mA, IB2 = 66mA Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = ...