2SB930A

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –8 –4 40 1.3 150 –55 to +150 Unit V 2SB930 2SB930A 2SB930 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 emitter voltage 2SB930A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.7±0.5 4.4±0.5 0 to 0.4 V A A W ˚C ˚C 10.0±0.3 1.5–0.4 4.4±0.5 2.0 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 5.08±0.5 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB930 2SB930A 2SB930 2SB930A 2SB930 2SB930A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –4A, IB1 = – 0.4A, IB2 = 0.4A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 ...