Ordering number:ENN1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Application...
Ordering number:ENN1029C
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit:mm 2006B
[2SB927/2SD1247]
6.0 5.0
Features
· Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.
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0.5 0.6
4.7
6.0 14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SB927
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.45
1.45
1 : Emitter 2 : Collector 3 : Base SANYO : MP
Ratings (–)30 (–)25 (–)6 (–)2.5 (–)5 1.0 150 –55 to +150
Unit V V V A A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)0.1A VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz 100* 65 130 150 19(32) MHz pF Conditions Ratings min typ max (–)0.1 (–)0.1 560* Unit µA µA
* : The 2SB927/2SD1247 are classified by 0.1A hFE as follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560
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