2SB903

Ordering number:990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB903/2SD1212] ( ) : 2SB903 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)6A VCE=(–)5V, IC=(–)1A * : The 2SB903/2SD1212 are graded as follows by hFE at 1A : 70 Q 140 100 R 200 140 S 280 JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)60 (–)30 (–)6 (–)12 (–)20 1.75 35 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 120 max (–)0.1 (–)0.1 280* Unit mA mA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high leve...