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2SB859

Hitachi Semiconductor
Part Number 2SB859
Manufacturer Hitachi Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline T...
Datasheet PDF File 2SB859 PDF File

2SB859
2SB859

Overview
2SB859 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1135 Outline TO-220AB 1 2 3 1.
Base 2.
Collector (Flange) 3.
Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating –100 –80 –5 –4 –8 40 150 –45 to +150 Unit V V V A A W °C °C 2SB859 Electrical Characteristics (Ta = 25°C) Item Symbol Min –80 –5 — 1 Typ — — — — — — — 20 75 Max — — –0.
1 200 — –1.
5 –2 — — Unit V V mA...


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