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GW39NC60VD Dataheets PDF



Part Number GW39NC60VD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL IGBT
Datasheet GW39NC60VD DatasheetGW39NC60VD Datasheet (PDF)

www.DataSheet.co.kr STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ ■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 Applications ■ ■ ■ ■ High frequency inverters UPS Motor drivers Induction heating TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Figure 1. Internal schematic diagram Table 1. Device.

  GW39NC60VD   GW39NC60VD


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www.DataSheet.co.kr STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ ■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 Applications ■ ■ ■ ■ High frequency inverters UPS Motor drivers Induction heating TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW39NC60VD Package TO-247 Packaging Tube STGW39NC60VD January 2008 Rev 7 1/15 www.st.com 15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Contents STGW39NC60VD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 6 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr STGW39NC60VD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC(1) IC (1) ICL (2) ICP (3) VGE IF IFSM PTOT Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at 25 °C Collector current (continuous) at 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current (tp=10 ms sinusoidal) Total dissipation at TC = 25 °C Operating junction temperature Value 600 80 40 220 220 ± 20 30 120 250 – 55 to 150 Unit V A A A A V A A W °C 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80%(VCES) , Tj = 150 °C, RG = 10 Ω, VGE= 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max (IGBT) Thermal resistance junction-case max (diode) Thermal resistance junction-ambient max Value 0.5 1.5 50 Unit °C/W °C/W °C/W 3/15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Electrical characteristics STGW39NC60VD 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES gfs (1) Static Parameter Test conditions Min. Typ Max. Unit 600 1.8 1.7 3.75 2.5 V V V V µA mA nA S Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) Collector-emitter saturation voltage Gate threshold voltage Collector-emitter cut-off current (VGE = 0) Gate-emitter cut-off current (VCE = 0) Forward transconductance VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A,TC=125 °C VCE= VGE, IC=1 mA VCE = 600 V VCE= 600 V, TC = 125 °C VGE = ± 20 V VCE = 15 V, IC= 30 A 5.75 500 5 ±100 20 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. Max Unit 2900 298 59 126 16 46 pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 19) 4/15 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr STGW39NC60VD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 30 A, RG=10 Ω, VGE = 15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10Ω, VGE=15 V TC=125 °C (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 Ω, VGE=15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 Ω, VGE=15 V TC=125 °C (see Figure 18) 33 178 65 68 238 128 ns ns ns ns ns ns Min. Typ. 33 13 2500 32 14 2280 Max. Unit ns ns A/µs ns ns A/µs Table 7. Symbol Eon (1) Eoff(2) Ets Eon (1) Eoff (2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 30A , VGE= 15V, RG= 10Ω (see Figure 20).


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