Ordering number:688H
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB827/2SD1063
50V/7A Switching Applicationsa
Appli...
Ordering number:688H
PNP/
NPN Epitaxial Planar Silicon Tranasistors
2SB827/2SD1063
50V/7A Switching Applicationsa
Applications
· Universal high current switching as solenoid driving, high speed inverter and converter.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO.
Package Dimensions
unit:mm 2022A
[2SB827/2SD1063]
( ) : 2SB827
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current DC Current Gain
IEBO hFE1
VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A
hFE2 VCE=(–)2V, IC=(–)5A
Gain-Bandwidth Product
fT VCE=(–)5V, IC=(–)1A
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)4A, IB=(–)0.4A
* : The 2SB827/2SD1063 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PB
Ratings (–)60 (–)50 (–)6 (–)7 (–)14 60 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.1 (–)0.1 280*
(–)0.4
Unit mA mA
MHz V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of relia...