2SB827

Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)40V, IE=0 Emitter Cutoff Current DC Current Gain IEBO hFE1 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A hFE2 VCE=(–)2V, IC=(–)5A Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)1A Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)4A, IB=(–)0.4A * : The 2SB827/2SD1063 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings (–)60 (–)50 (–)6 (–)7 (–)14 60 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* (–)0.4 Unit mA mA MHz V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of relia...