40NT

www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Features Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Metric thread type available Low thermal resistance 40NT Phase Control Thyristors, 40A (Stud and Lead Type) ype) Electrical Ratings (TJ = 250C, unless otherwise noted) Parameters Maximum on-state average current 180 0 sinusoidal conduction @ TJ = 85 C Maximum RMS on-state current O Symbol IT(AV) IT(RMS) ITSM It VRRM, VDRM VTM IH IL di/dt 2 Values 40 63 600 800 200 to 1600 1.2 150 400 200 100 Units A A A As V V mA mA A/µs 2 Maximum peak, one cycle non-repetitive surge current 2 Maximum I t for fusing Maximum repetitive peak on and off-state voltage range 0 Maximum peak on-state voltage (TJ = 25 C, Ipeak = 79A) Maximum holding current @ TJ Maximum latching current @TJ Maximum rate of rise of turn-on current, VDRM ≤ 600V TJ = TJ maximum, Critical rate of rise of 100% VDRM off-state voltage TJ = TJ maximum, 67% VDRM Maximum gate anode supply 6 V current required to resistive load @TJ trigger Maximum gate voltage required to trigger dv/dt 300 V/µs TO-208AC (TO-65) & TO-209AC (TO-94) IGT 60 mA VGT 2.0 V Thermal and Mechanical Specifications (TJ = 250C, unless otherwise noted) Parameters Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Mounting torque Approximate weight Symbol TJ TStg Rth(JC) V...