2SB825

Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low saturation voltage : VCE(sat)=(–)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A * : The 2SB825/2SD1061 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 JEDEC : TO-220AB EIAJ : SC-46 1: Base 2 : Collector 3 : Emitter Ratings (–)60 (–)50 (–)6 (–)7 (–)12 40 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* Unit mA mA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose f...