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604DCR Dataheets PDF



Part Number 604DCR
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description Phase Control Thyristor Capsules
Datasheet 604DCR Datasheet604DCR Datasheet (PDF)

www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Phase Control Thyristors (Capsule Type) Features • • • • Metal case with ceramic insulator High current rating Bifacial cooled Center gate trigger 6 604DCR Applications • • • DC motor control AC controllers DC power supplies TO-200AB 200AB (E-PUK) Voltage Ratings Type number Voltage Code 40 60 604DCR 80 100 120 140 160 VDRM/VRRM, Maximum Repetitive peak & off-state state voltage V 400 600 800 1000 1200 1400 1600 VRSM, Maximum nonrepet.

  604DCR   604DCR


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www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Phase Control Thyristors (Capsule Type) Features • • • • Metal case with ceramic insulator High current rating Bifacial cooled Center gate trigger 6 604DCR Applications • • • DC motor control AC controllers DC power supplies TO-200AB 200AB (E-PUK) Voltage Ratings Type number Voltage Code 40 60 604DCR 80 100 120 140 160 VDRM/VRRM, Maximum Repetitive peak & off-state state voltage V 400 600 800 1000 1200 1400 1600 VRSM, Maximum nonrepetitive peak voltage V 500 700 900 1100 1300 1500 1700 40 IDRM/IRRM, Maximum at TJ = TJ maximum mA Electrical Ratings (TJ = 250C, unless otherwise specified specified) Parameters Maximum on-state average current 180 sinusoidal conduction @ TC = 55 C Maximum RMS on-state current Maximum peak, one cycle non-repetitive repetitive surge current Maximum I t for fusing @ t = 10ms Maximum repetitive peak on and off-state state voltage range Maximum peak on-state voltage (TJ = 125 C, Ipeak = 1100A) Maximum holding current @ TJ = 25 C 0 Maximum latching current @TJ = 25 C Threshold voltage Slope resistance 0 0 2 O 0 Symbol IT(AV) IT(RMS) ITSM It VRRM, VDRM VTM IH IL VT0 rT 2 Values 600 940 9100 415 400 to 1600 1.7 200 800 1.0 0.65 Units A A A As V V mA mA V mΩ 2 Switching Ratings (TJ = 250C, unless otherwise specified) Parameters Rate of rise of turn-on current @ TJ = TJ max, anode voltage ≤ 80% VDRM Typical turn-on time Typical turn-off time Symbol di/dt td tq Values 150 1 9.0 15 150 Units A/µs µs 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Blocking Parameters (TJ = 250C, unless otherwise specified) Parameters Critical rate of rise of off-state voltage @ TJ = TJ max, linear to 80% rated VDRM Maxmimum peak reverse & off-state state leakage current @ TJ = TJ max, rated VDRM/VRRM applied Symbol dV/dt IRRM, IDRM 6 604DCR Values 500 40 Units V/µs mA Triggering Parameters (TJ = 250C, unless otherwise specified) Parameters DC gate current to trigger DC gate voltage to trigger Symbol IGT VGT Values 200 3.0 Units mA V Thermal and Mechanical Specifications (TJ = 250C, unless otherwise specified) Parameters Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Mounting torque Approximate weight Symbol TJ TStg Rth(JC) F WT Values - 40 to +125 - 40 to +125 0.06 0. 9 … 11 90 0 Units 0 C 0 C C/W kN g ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Datasheet pdf - http://www.DataSheet4U.net/ .


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