130NTD

Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 13 130NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 130 300 3300 51 Units A A A kA s M2 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 65 to +125 +1 0.18 0 Units 0 C C/W Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage Symbol IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO Values 130 200 to 1600 1.55 150 2.5 200 300 1000 3500 Units A V V mA V mA mA V/µs V 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120 [email protected] www.nainasemi.com Naina Semiconductor emiconductor Ltd. 13 130NTD ALL DIMENSIONS IN MM Diode Configuration 2 D-95...