2SD380

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 7 A IBM Base Current-Peak PC Collector Power Dissipation @ TC≤75℃ TJ Junction Temperature 3.5 A 50 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ 2SD380 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 750V ; IE= 0 VCB= 1500V ; IE= 0 hFE DC Current Gain IC= 5A ; VCE= 10V tf Fall Time tstg Storage Time IC= 5A, IBend= 1.5A, LB= 5μH 2SD380 MIN TYP. MAX UNIT 5 V 10 V 1.6 V 100 μA 1 mA 5 15 0.9 μs 11 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification...