JCS8N65B

www.DataSheet.co.kr R N N-CHANNEL MOSFET JCS8N65B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 6R 0 V 1. Ω 25 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 16pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 16pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS8N65CB-O-C-N-B JCS8N65FB-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS8N65CB JCS8N65FB Package TO-220C TO-220MF Packaging Tube Tube ：201011A 1/10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr R ABSOLUTE RATINGS (Tc=25℃) JCS8N65CB 650 7.0 4.3 30 ±30 590 7.0 14.0 4.5 142 Value JCS8N65B Parameter － Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM VGSS JCS8N65FB 650 7.0* 4.3* 30* Unit V A A A V mJ A mJ V/ns -continuous （ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） EAS Single Pulsed Avalanche Energy （note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Current（note 1） IAR EAR （ 3） dv/dt Peak Diode Recovery dv/dt（note 3） PD TC=25℃ -Derate above 25℃ TJ，TSTG 48 W Power Dissipation 1.14 0.38 W/℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55～+150 ℃ TL 300 ℃ * *Drain current limited by maximum junction temperature ...