N-CHANNEL MOSFET
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R
N N-CHANNEL MOSFET
JCS830
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z ...
Description
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R
N N-CHANNEL MOSFET
JCS830
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z z UPS
4.5 A 500 V 1.5 Ω 32 nC
APPLICATIONS
z High efficiency switch
mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 17pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
z z Crss ( 17pF) z z z dv/dt z RoHS
ORDER MESSAGE
Order codes JCS830V-O-V-N-B JCS830R-O-R-N-B JCS830S-O-S-N-B JCS830B-O-B-N-B JCS830C-O-C-N-B JCS830F-O-F-N-B IPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS830V JCS830R JCS830S JCS830B JCS830C JCS830F Package Packaging Tube Tube Tube Tube Tube Tube
:201007A
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Datasheet pdf - http://www.DataSheet4U.net/
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R
JCS830
ABSOLUTE RATINGS (Tc=25℃)
JCS830V/R JCS830F Value JCS830S/B/C 500 4.5 2.9 4.5* 2.9* Unit V A A
Parameter - Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy (note 2) ( 1) Avalanche Current(note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt(note 3)
18
18*
A
VGSS
±30
V
EAS
270
mJ
IAR
4.5
A
EAR
7.3
mJ
dv/dt
5.5
V/ns
Power Dissipation
PD TC=25℃ -Derate above 25...
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