2SC3868

www.DataSheet.co.kr Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 3 1.5 0.5 25 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 10V, IC = 0.2A, f = 10MHz IC = 0...