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2SB738 Dataheets PDF



Part Number 2SB738
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB738 Datasheet2SB738 Datasheet (PDF)

2SB738, 2SB739 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB738 –20 –16 –6 –2 0.9 150 –55 to +150 2SB739 –20 –20 –.

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2SB738, 2SB739 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SB738 –20 –16 –6 –2 0.9 150 –55 to +150 2SB739 –20 –20 –6 –2 0.9 150 –55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) 2SB738 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SB739 Max Min — — — –2 –20 –20 –6 — Typ — — — — — — — 150 50 Max Unit Test conditions — — — –2 V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –16 V, IE = 0 VEB = –6 V, IC = 0 VCE = –2 V, IC = –0.1 A I C = –1 A, IB = –0.1 A Typ — — — — — — — 150 50 –20 –16 –6 — — 100 — — — –0.2 — 320 100 –0.2 µA 320 –0.3 V — — VCE(sat) fT –0.3 — — — — — MHz VCE = –2 V, IC = –10 mA pF VCB = –10 V, IE = 0, f = 1 MHz Collector output capacitance Cob Note: B 100 to 200 1. The 2SB738 and 2SB739 are grouped by h FE as follows. C 160 to 320 2 2SB738, 2SB739 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (mA) –100 –0 Typical Output Characteristics (1) .35 –0 .3 –0. 25 –80 –60 –40 0.8 –0.2 –0.1 5 –0.1 0.4 –20 –0.05 mA IB = 0 0 50 100 Ambient Temperature Ta (°C) 150 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) –2.0 –25 –20 –15 –1,000 Collector Current IC (mA) –300 –100 Typical Transfer Characteristics Collector Current IC (A) –1.6 –1.2 –10 VCE = –2 V Pulse Ta = 75°C –30 25 –10 –3 –1 –25 –5 mA –0.8 PC = 0. 9W –0.4 0 –0.4 –0.8 –1.2 –1.6 –2.0 Collector to Emitter Voltage VCE (V) 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 3 2SB738, 2SB739 DC Current Transfer Ratio vs. Collector Current Base to Emitter Saturation Voltage VBE (sat) (V) 10,000 DC Current Transfer Ratio hFE 3,000 1,000 25 300 100 30 10 –1 –25 Pulse VCE = –2V Collector to Emitter Saturation Voltage VEC (sat) (V) –3.0 –1.0 –0.3 –0.1 –0.03 –0.01 Pulse IC = 10 IB VBE (sat) Saturation Voltage vs. Collector Current Ta = 75°C VCE (sat) –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) –0.003 –3 –10 –30 –100 –300 –1,000 –3,000 Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 1,000 f = 1 MHz IE = 0 300 100 30 10 –0.1 –0.3 –1.0 –3 –10 Collector to Base Voltage VCB (V) 4 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.5 ± 0.1 0.7 0.60 Max 2.3 Max 10.1 Min 8.0 ± 0.5 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this documen.


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