DatasheetsPDF.com

2SC1061

Part Number	2SC1061
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Dec 1, 2011
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Curr...
Datasheet	2SC1061 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.
0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.
5A ·Complement to Type 2SA671 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
5 A 25 ...

Similar Datasheet

2SC1000 Silicon NPN Transistor - ETC
2SC1001 SILICON NPN TRANSISTOR - Toshiba
2SC1002 Silicon NPN Power Transistors - SavantIC
2SC1004 SILICON POWER TRANSISTOR - SavantIC
2SC1004 NPN Transistor - INCHANGE
2SC1008 NPN Transistor - INCHANGE
2SC1008 Transistors - TRANSYS Electronics Limited
2SC1008 NPN Transistor - Weitron
2SC1008 NPN Transistor - SeCoS
2SC1008 Transistors - TGS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)