Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
s Features
q High foward current transfer...
Transistor
2SB726
Silicon
PNP epitaxial planer type
For general amplification
s Features
q High foward current transfer ratio hFE. q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings –80 –80 –5 –100 250 150
–55 ~ +150
Unit V V V mA mW ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency
ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT
Conditions
VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –5V, IE = –2mA IC = –20mA, IB = –2mA VCE = –1V, IC = –100mA VCB = –5V, IE = 2mA, f = 200MHz
min typ max Unit
–100 nA
–1 µA
–80 V
–80 V
–5 V
180 700
– 0.6
V
–1 –1.2 V
150 MHz
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S 260 ~ 520
T 360 ~ 700
1
Collector power dissipation PC (mW)
Transistor
PC — Ta
500 450 400 350 300 250 200 150 100
50 0 0 40 80 120 160 200
Ambient temperature...