2SB710

Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) ■ Features Large collector current IC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 1 2 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0710 2SB0710A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 − 0.5 −1 200 150 −55 to +150 V A A mW °C °C V Unit V 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 Collector-emitter voltage 2SB0710 (Base open) 2SB0710A 1.1+0.3 –0.1 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 2SB0710: C 2SB0710A: D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0710 2SB0710A 2SB0710 2SB0710A VEBO ICBO hFE1 *2 Symbol VCBO VCEO Conditions IC = −10 µA, IE = 0 IC = −10 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −500 mA IC = −300 mA, IB = −30 mA IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −30...