MTP3N60 MTP3N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP3N60 MTP3N60FI
s s s s s
V DSS 600 V 600 V
R DS( on) < 2.5 Ω < 2.5 Ω
ID 3.9 A 2.5 A
TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2 1 2
3
APPLICATIONS s HIGH CURRENT, ...
