SI4559ADY

www.vishay.com Si4559ADY Vishay Siliconix N- and P-Channel 60 V (D-S) MOSFET SO-8 Dual D2 D2 5 D1 6 D1 7 8 4 3 G2 2 S2 1 G1 S1 Top View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V Qg typ. (nC) ID (A) a Configuration 60 -60 0.058 0.120 0.072 0.150 6 8 5.3 -3.9 N- and p-pair ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS CCFL Inverter D1 S2 G2 G1 Available S1 N-Channel MOSFET SO-8 Si4559ADY-T1-E3 Si4559ADY-T1-GE3 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (10 μs pulse width) Source drain current diode current Pulsed source-drain current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg 60 -60 ± 20 ± 20 5.3 -3.9 4.3 -3.2 4.3 b, c -3 b, c 3.4 b, c -2.4 b, c 20 -25 2.6 -2.8 1.7 b, c -1.7 b, c 20 -25 11 15 6.1 11 3.1 3.4 2 2.2 2 b, c 2 b, c 1.3 b, c...