011N40P1

www.DataSheet.co.kr SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 RATING CHARACTERISTIC SYMBOL KHB011N40F1 UNIT KHB011N40P1 KHB011N40F2 400 30 10.5 ID 6.6 IDP EAS EAR dv/dt 135 PD 1.07 Tj Tstg 150 -55 150 0.35 W/ 42 360 13.5 4.5 44 6.6* 42* mJ mJ V/ns W Q 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB KHB011N40F1 Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS V V 10.5* A K E A F C O DIM B MILLIMETERS L M J R D N N H A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0...