AON7407

www.DataSheet.co.kr AON7407 20V P-Channel MOSFET General Description The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -40A < 9.5mΩ < 12.5mΩ < 18mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3_EP Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum -20 ±8 -40 -29 -100 -14.5 -11.5 -40 80 29 12 3.1 2 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3.5 Max 40 75 4.2 Units ° C/W ° C/W ° C/W Rev 0: June 2011 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7407 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditio...