20V P-Channel MOSFET
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AON7407
20V P-Channel MOSFET
General Description
The AON7407 combines advanced trench MOSFET techn...
Description
www.DataSheet.co.kr
AON7407
20V P-Channel MOSFET
General Description
The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V)
-20V
-40A < 9.5mΩ < 12.5mΩ < 18mΩ
100% UIS Tested 100% Rg Tested
Top View
DFN 3x3_EP Bottom View
D
Top View
1 2 3 4 8 7 6 5
G S
Pin 1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
Maximum -20 ±8 -40 -29 -100 -14.5 -11.5 -40 80 29 12 3.1 2 -55 to 150
Units V V A
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 30 60 3.5
Max 40 75 4.2
Units ° C/W ° C/W ° C/W
Rev 0: June 2011
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Datasheet pdf - http://www.DataSheet4U.net/
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AON7407
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditio...
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