AON7402

www.DataSheet.co.kr AON7402 30V N-Channel MOSFET General Description The AON7402 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 20A < 10mΩ < 15mΩ 100% UIS Tested! 100% Rg Tested! DFN 3x3 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 Pin 1 G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 30 ±20 20 16 80 13.5 10.8 20 20 27 11 3.1 2 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 4 Max 40 75 4.5 Units ° C/W ° C/W ° C/W Rev 2: June 2009 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7402 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±...