VSMY7850X01

www.DataSheet.co.kr VSMY7850X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21783 DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A. APPLICATIONS Infrared illumination for CMOS cameras (CCTV) Driver assistance systems Machine vision IR data transmission PRODUCT SUMMARY COMPONENT VSMY7850X01 Ie (mW/sr) 170  (deg) ± 60 p (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMY7850X01-GS08 Note MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 2000 pcs, 2000 pcs/reel PACKAGE FORM Little Star ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise ...