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SMD Type
Low Frequency Transistor 2SD2150
Transistors
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -...
www.DataSheet.co.kr
SMD Type
Low Frequency
Transistor 2SD2150
Transistors
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -0.1
+0.1 1.80-0.1
Features
+0.1 2.50-0.1
Low VCE(sat). Excellent DC current gain characteristics.
NPN silicon
transistor.
+0.1 0.48-0.1
1
2
3
+0.1 0.80-0.1
+0.1 0.53-0.1 +0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 20 6 3 0.5 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=30V VEB=5V 0.2 180 290 25 Testconditons Min 40 20 6 0.1 0.1 0.5 560 MHz pF Typ Max Unit V V V ìA ìA V
VCE(sat) IC=2A, IB=0.1A hFE fT Cob VCE=2V, IC=0.1A VCE=2V, IE= -0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking Rank hFE R 180 390 CF S 270 560
+0.1 -0.1
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1
Datasheet pdf - http://www.DataSheet4U.net/
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