2SJ585LS
www.DataSheet.co.kr
Ordering number:ENN6412
P-Channel Silicon MOSFET
2SJ585LS
Ultrahigh-Speed Switching Applications
...
Description
www.DataSheet.co.kr
Ordering number:ENN6412
P-Channel Silicon MOSFET
2SJ585LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2078B
[2SJ585LS]
10.0
3.5 7.2
4.5
2.8
3.2
16.1
16.0
0.9 1.2
14.0
3.6
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25°C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS
Conditions
0.6
Ratings –250 ±30 –6.5 –26 2.0 30 150 –55 to +150
Unit V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–250V, VGS=0 VGS=±25V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3.5A ID=–3.5A, VGS=–10V –3.5 2.4 4.0 0.56 0.7 Conditions Ratings min –250 ±30 –100 ±10 –5.0 typ max Unit V V µA µA V S Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high l...
Similar Datasheet