F6P02T3

www.DataSheet.co.kr NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223 Features Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified http://onsemi.com Typical Applications –6.0 AMPERES –20 VOLTS RDS(on) = 44 mW (Typ.) P–Channel D Power Management in Portables and Battery–Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage Drain Current (Note 1) – Continuous @ TA = 25°C – Continuous @ TA = 70°C – Single Pulse (tp = 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = –20 Vdc, VGS = –5.0 Vdc, IL(pk) = –10 A, L = 3.0 mH, RG = 25W) Thermal Resistance – Junction to Lead (Note 1) – Junction to Ambient (Note 2) – Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg EAS Value –20 ±8.0 –10 –8.4 –35 8.3 –55 to +150 150 Unit Vdc Vdc Adc Apk W °C mJ 1 2 3 4 G S MARKING DIAGRAM SOT–223 CASE 318E STYLE 3 AWW 6P02 °C/W RθJL RθJA RθJA TL 15 71.4 160 260 °C A WW 6P02 = Assembly Location = Work Week = Device Code PIN ASSIGNMENT 4 Drain 1. Steady State. 2. When surface mounted to an FR4 board using 1″ pad size, (Cu. Area 1.127 in2), Steady State. 3. When surface mounted to an FR4 board using...