PNP Middle Power Transistor
2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is...
Description
2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat)≦-350mV at IC=-500mA /IB= -25mA
lOutline
TSMT3
SOT-346T
SC-96
lInner circuit
Datasheet
lApplication LOW FREQUENCY AMPLIFIER
lPackaging specifications
Part No.
Package
Package size
Taping code
Reel size Tape width (mm) (mm)
Basic ordering unit.(pcs)
Marking
2SB1710
TSMT3 2928
TL
180
8
3000
EW
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20150730 - Rev.002
2SB1710
lAbsolute maximum ratings (Ta = 25°C) Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Power dissipation
Junction temperature Range of storage temperature
Datasheet
Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg
Values -30 -30 -6 -1 -2 0.5 1.0 150
-55 to +150
Unit V V V A A W W
℃ ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Min. Typ. Max.
Collector-base breakdown voltage
BVCBO IC = -10μA
-30 -
-
Collector-emitter breakdown voltage
BVCEO IC = -1mA
-30 -
-
Emitter-base breakdown voltage BVEBO IE = -10μA
-6 -
-
Collector cut-off current
ICBO VCB = -30V
- - -100
Emitter cut-off current
IEBO ...
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