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2SB1710

Rohm

PNP Middle Power Transistor

2SB1710 General purpose amplification (-30V, -1A) Parameter VCEO IC Value -30V -1A lFeatures 1)A collector current is...


Rohm

2SB1710

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2SB1710 General purpose amplification (-30V, -1A) Parameter VCEO IC Value -30V -1A lFeatures 1)A collector current is large. 2)Collector saturation voltage is low.   VCE(sat)≦-350mV   at IC=-500mA /IB= -25mA lOutline TSMT3     SOT-346T SC-96                lInner circuit Datasheet     lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications                        Part No. Package Package size Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking 2SB1710 TSMT3 2928 TL 180 8 3000 EW                                                                                                                                        www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150730 - Rev.002 2SB1710            lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature                 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values -30 -30 -6 -1 -2 0.5 1.0 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -10μA -30 - - Collector-emitter breakdown voltage BVCEO IC = -1mA -30 - - Emitter-base breakdown voltage BVEBO IE = -10μA -6 - - Collector cut-off current ICBO VCB = -30V - - -100 Emitter cut-off current IEBO ...




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