2SB1667

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC −60 −60 −7 −3 −0.5 1.5 25 V V V A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10S2A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.4 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Downloaded from Elcodis.com electronic components distributor 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SB1667(SM) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gai...