2SB1629

Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 s Features q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –60 –6 –6 –3 –1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 15.0±0.3 3.0±0.2 13.7–0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = –60V, IE = 0 VEB = –40V, IB = 0 VEB = –6V, IC = 0 IC = –25mA, IB = 0 VCE = –4V, IC = – 0.5A IC = –2A, IB = – 0.05A VCE = –12V, IC = – 0.2A, f = 10MHz 30 –60 300 700 –1 V MHz min typ max –100 –100 –100 Unit µA µA µA V FE Rank classification Q 300 to 500 P 400 to 700 Rank hFE 1 Power T...