MT4953

www.DataSheet.co.kr P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description MT4953 The MT4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Simple Drive Requirement * Lower on-resistance * Fast Switching BVDSS RDS(ON) ID - 30 V 53 mΩ -5A Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 2 1 1 1 Symbol VDS VGS ID @T A=25℃ ID @T A=70℃ I DM PD @TA=25℃ Tj, Tstg Ratings -30 +/- 16 -5 -4 -20 2 0.02 -55~+150 Unit V V A A A W W/℃ ℃ Total Power Dissipation Linear Derating Factor o perating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 1 Symbol Max. Rthj-amb Value 62.5 Unit ℃/W MT4953 Page: 1/7 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr P-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (Tj = 25℃ unless otherwise specified) MT4953 Source-Drain Diode Notes: 1. Surface Mounted on FR4 Board, t≦10sec. 2. Pulse width≦300us, duty cycle≦2%. MT4953 Page: 2/7 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr P-CHANNEL ENHANCEMENT MODE POWER MOSFET Characteristics Curve Fig 1. Typical Output Charact...