2SB1605A

Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.1±0.2 8.0±0.2 Solder Dip s Absolute Maximum Ratings 15.0±0.3 3.0±0.2 13.7–0.2 +0.5 V 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1605A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1605 2SB1605A 2SB1605 2SB1605A 2SB1605 2SB1605A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3...