www.DataSheet.co.kr
SMD Type
High-Current Switching Applications 2SB1204
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm...
www.DataSheet.co.kr
SMD Type
High-Current Switching Applications 2SB1204
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low collector-to-emitter saturation voltage. High current and high fT.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
Fast switching time.
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Ta = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -60 -50 -6 -8 -12 1 20 150 -55 to +150 Unit V V V A A W W
3 .8 0
Excellent linearity of hFE.
www.kexin.com.cn
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
SMD Type
2SB1204
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -6A VCE = -5V , IC = -1A VCB = -10V , f = 1MHz
Transistors
Min
Typ
Max -1 -1
Unit ìA ìA
70...