PBSS4140V

www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 20 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES 300 mW total power dissipation Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package Improved thermal behaviour due to flat leads Excellent coplanarity due to straight leads Low collector-emitter saturation voltage High current capabilities Reduced required PCB area. APPLICATIONS General purpose switching and muting LCD backlighting Supply line switching circuits Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. MARKING TYPE NUMBER PBSS4140V MARKING CODE 22 1 Top view 2 3 handbook, halfpage PBSS4140V QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 1 2 <190 UNIT V A A mΩ 6 5 4 1, 2, 5, 6 3 4 MAM444 Fig.1 Simplified outline (SOT666) and symbol. 2002 Jun 20 2 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Philips Semiconductors Product specification 40 V low ...