DatasheetsPDF.com

IXZ4DF18N50 Dataheets PDF



Part Number IXZ4DF18N50
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description RF Power MOSFET&DRIVER
Datasheet IXZ4DF18N50 DatasheetIXZ4DF18N50 Datasheet (PDF)

www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low Rds(ON) • Very low insertion inductance(<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMO.

  IXZ4DF18N50   IXZ4DF18N50


Document
www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced Z-MOS process • Low Rds(ON) • Very low insertion inductance(<2nH) • No beryllium oxide (BeO) or other hazardous materials • Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes • Latch-up protected • Low quiescent supply current Applications Advantages • Optimized for RF and high speed • Easy to mount—no insulators needed • High power density • Single package reduces size and heat sink area • Class D or E Switching Amplifier • Multi MHz Switch Mode Power Supplies (SMPS) 500 Volts 19 A 0.29 Ohms Description The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating range. Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ4DF18N50 unmatched in performance and value. The IXZ4DF18N50 is packaged in DEI's low inductance RF package incorporating DEI's RF layout techniques to minimize stray lead inductances for optimum switching performance. The IXZ4DF18N50 is a surfacemountable device. Figure 1. Functional Diagram Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Device Specifications Parameter Maximum Junction Temperature Operating Temperature Range Weight Value 150°C - 40°C to 85°C 5.5g Test Conditions ID = 0.5IDM25 Maximum Ratings 40MHz 500V 20V 50uA 1mA 19A 95A 19A 500 W 0.25 °C/W TBD °C/W Test Condition Minimum Typical 0.29 Ω 8V - 5V VCCIN -2V Symbol fMAX VDSS VCC, VCCIN IDSS IDM25 IDM IAR PT (MOSFET and Driver) RthJC RthJHS Device Performance VDS = 0.8VDSS VGS = 0V TJ = 25C TJ = 125C TC = 25°C TC = 25°C, Pulse limited by TJM TC = 25°C TC = 25°C Symbol Rds(ON) VCC, VCCIN IN (Signal Input) VIH (High Input Voltage) VIL (Low Input Voltage) ZIN Cstray COSS tONDLY tOFFDLY tR tF Maximum VCC = 15 V, ID = 0.5IDM25 Pulse Test, t ≤ 300µS, Duty Cycle ≤ 2% 15V 20V VCCIN+0.3V VCCIN+0.3V 0.8V f = 1MHz f = 1MHz Any one pin to the back plane metal 7960 Ω 46pf 139pf 17 nS 26 nS 3 nS 3 nS VGS = 0V, VDS = 0.8VDSS(max) , f =1MHz TC = 25°C VCC, VCCIN, VIN = 15V, 1µS Pulse, VDS = 50V, RL = 5.0Ω TC = 25°C VCC, VCCIN, VIN = 15V,1µS Pulse, VDS = 50V, RL = 5.0Ω Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Fig. 2 Fig. 3 R DS(ON) vs. Temperature ID = 0.5 IDM 0.7 0.65 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0.25 0.2 20 70 120 170 Extended Output Characteristics @ 25°C 90 80 70 60 50 40 30 20 10 0 0 25 50 V DS (V) 75 100 125 ID (A) V GS = 20V V GS = 15V V GS = 8V R DS(ON) Ω Temperature °C Fig. 4 Propagation Delay ON vs. Supply Voltage ID = 0.5 IDM 24 23 Fig. 5 Propagation Delay OFF vs. Supply Voltage ID= 0.5 IDM 26.5 Time (nS) 20 19 18 17 16 15 5 10 15 20 25 Time (nS) 22 21 26 25.5 5 10 15 20 25 VCC / VCCIN / IN (V) Fig. 6 18.5 18 VCC / VCCIN / IN (V) Propagation Delay OFF vs. Temperature ID = 0.5 IDM, VCC / VCCIN / IN =15V Propagation Delay ON vs. Temperature ID= 0.5 IDM, VCC / VCCIN / IN = 15V Fig. 7 30 29 Time (nS) Time (nS) 17.5 17 16.5 16 20 70 120 170 28 27 26 25 20 70 120 170 Temperature °C Temperature °C Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Fig. 8 Rise Time vs. Supply Voltage ID = 0.5 IDM 4 Fig. 9 12 10 Fall Time vs. Supply Voltage ID = 0.5 IDM 3.5 Time (nS) Time (nS) 8 6 4 2 3 2.5 0 2 5 10 15 20 25 5 10 15 20 25 VCC / VCCIN / IN (V) Fig. 10 3 VCC / VCCIN / IN (V) Fig. 11 3 Rise Time vs. Temperature ID = 0.5 IDM , VCC / VCCIN / IN = 15V Fall Time vs. Temperature ID = 0.5 IDM, VCC / VCCIN / IN = 15V 2.5 Time (nS) 2 Time (nS) 20 70 120 170 2.5 2 1.5 1 1.5 20 70 120 170 Temperature °C Temperature °C Fig. 12 O u tp u t C a p a c ita n c e vs . V D S Vo lta g e Fig. 13 10 VCC Supply Current vs. Frequency Driver Section 20V 15V 8V 10000 Capacitance (pF) 1000 VCC Current (A) 100 C O SS 1 10 0.1 1 0 100 200 300 400 500 0.01 0 10 20 30 40 50 V D S (V) Frequency (MHz) Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Fig. 14 VCCIN Supply Current vs. Frequency Driver Section 10 20V 15V 8V 0.1 VCCIN Current (A) 1 0.01 0.001 0 10 20 30 40 50 Frequency (MHz) Test Circuit Fig. 15 V.


IXZ4DF12N100 IXZ4DF18N50 M48T59Y


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)