IXZ4DF12N100

www.DataSheet.co.kr IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability IXYS advanced Z-MOS process Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes Latch-Up Protected Low Quiescent Supply Current Advantages Optimized for RF and high speed Easy to mount—no insulators needed High power density Single package reduces size and heat sink area 1000 Volts 12 A 0.7 Ohms Applications Class D or E Switching Amplifier Multi MHz Switch Mode Power Supplies (SMPS) Description The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the ...