2SB1570

(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1570 –160 –150 –5 –12 –1 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1570 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz 2SB1570 –100max –100max –150min 5000min∗ –2.5max –3.0max 50typ 230typ V V MHz pF 20.0min 4.0max B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –70 RL (Ω) 10 IC (A) –7 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –12 V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –12 (V C E =–4V) 0 –1 –10 Collector Current I C (A) m A –2 .0 m A –2 .0m A –1.5 mA –10 Collector Current I C (A) –8 –1.2m A –2 –8 –1.0 mA –6 –0.8m A –10A –7A I C =–5A –1 –6 mp)...