Darlington
2SB1560
(70Ω) E B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390...
Darlington
2SB1560
(70Ω) E B Equivalent circuit C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD2390) Application : Audio, Series
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions MT-100(TO3P)
Symbol
Ratings
Unit
Symbol
Conditions
Ratings
Unit
VCBO
–160
V ICBO
VCB=–160V
–100max
µA
VCEO
–150
V IEBO
VEB=–5V
–100max
µA
VEBO
–5
V V(BR)CEO
IC=–30mA
–150min
V
IC
–10 A hFE
VCE=–4V, IC=–7A
5000min∗
IB
–1
A
VCE(sat)
IC=–7A, IB=–7mA
–2.5max
V
PC
100(Tc=25°C)
W
VBE(sat)
IC=–7A, IB=–7mA
–3.0max
V
Tj
150 °C fr
VCE=–12V, IE=2A
50typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
230typ
pF
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg tf
(V)
(Ω) (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ
20.0min 4.0max
19.9±0.3 4.0 2.0
1.8 5.0±0.2
15.6±0.4 9.6
4.8±0.2 2.0±0.1
a ø3.2±0.1 b
2 3 1.05 +-00..12
0.65
+0.2 -0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g a. Part No. b. Lot No.
DC Current Gain hFE
Collector Current IC(A) –10mA
I C– V CE Characteristics (Typical)
–10
–2
.5
mA –2
.
0
m
A
–1.5mA
–8 –1.2mA –1.0mA
–6 –0.8mA
–0.6mA
–4 IB=–0.4mA
–2
0 0 –2 –4 –6 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Cha...