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AT29LV040A Dataheets PDF



Part Number AT29LV040A
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description 4-megabit (512K x 8) 3-volt Only 256-byte Sector Flash Memory
Datasheet AT29LV040A DatasheetAT29LV040A Datasheet (PDF)

www.DataSheet.co.kr Features • • • • • Single Voltage, Range 3V to 3.6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fast Read Access Time – 150 ns Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 2048 Sectors (256 Bytes/Sector) – Internal Address and Data Latches for 256 Bytes Two 16K Bytes Boot Blocks with Lockout Fast Sector Program Cycle Time – 20 ms Max Internal Pr.

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www.DataSheet.co.kr Features • • • • • Single Voltage, Range 3V to 3.6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fast Read Access Time – 150 ns Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 2048 Sectors (256 Bytes/Sector) – Internal Address and Data Latches for 256 Bytes Two 16K Bytes Boot Blocks with Lockout Fast Sector Program Cycle Time – 20 ms Max Internal Program Control and Timer DATA Polling for End of Program Detection Typical Endurance > 10,000 Cycles CMOS and TTL Compatible Inputs and Outputs Green (Pb/Halide-free) Packaging Option • • • • • • • • 4-megabit (512K x 8) 3-volt Only 256-byte Sector Flash Memory AT29LV040A 1. Description The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times to 150 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 3-volt only Flash memories. To allow for simple in-system reprogrammability, the AT29LV040A does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV040A is performed on a sector basis; 256 bytes of data are loaded into the device and then simultaneously programmed. During a reprogram cycle, the address locations and 256 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin. 0334H–FLASH–9/08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2. Pin Configurations Pin Name A0 - A18 CE OE WE I/O0 - I/O7 NC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect 2.1 32-lead PLCC Top View A12 A15 A16 A18 VCC WE A17 2.2 32-lead TSOP (Type 1) Top View I/O1 I/O2 GND I/O3 I/O4 I/O5 I/O6 14 15 16 17 18 19 20 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 5 6 7 8 9 10 11 12 13 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 A14 A13 A8 A9 A11 OE A10 CE I/O7 A11 A9 A8 A13 A14 A17 WE VCC A18 A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 2 AT29LV040A 0334H–FLASH–9/08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AT29LV040A 3. Block Diagram 4. Device Operation 4.1 Read The AT29LV040A is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. 4.2 Software Data Protection Programming The AT29LV040A has 2048 individual sectors, each 256 bytes. Using the software data protection feature, byte loads are used to enter the 256 bytes of a sector to be programmed. The AT29LV040A can only be programmed or reprogrammed using the software data protection feature. The device is programmed on a sector basis. If a byte of data within the sector is to be changed, data for the entire 256-byte sector must be loaded into the device. The AT29LV040A automatically does a sector erase prior to loading the data into the sector. An erase command is not required. Software data protection protects the device from inadvertent programming. A series of three program commands to specific addresses with specific data must be presented to the device before programming may occur. The same three program commands must begin each program operation. All software program commands must obey the sector program timing specifications. Power transitions will not reset the software data protection feature, however the software feature will guard against inadvertent program cycles during power transitions. Any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device; however, for the duration of tWC, a read operation will effectively be a polling operation. After the software data protection’s 3-byte command code is given, a byte load is performed by applying a low .


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