IRIS-G6351S

www.DataSheet.co.kr Data Sheet No. PD 96945A IRIS-G6351S Features Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Low start-up circuit current (50uA max) Built-in Active Low-Pass Filter for stabilizing the operation in case of light load Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. Built-in constant voltage drive circuit Various kinds of protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) IRIS-G6351S 650 3.95Ω INTEGRATED SWITCHER Package Outline TO-220 Fullpack (5 Lead) Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) 230±15% 85 to 264 Pout(W) Note 1 65 30 Descriptions Note 1: The Pout (W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above. IRIS-G6351S is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes downsizing and standa...