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IPP45N06S4L-08 Dataheets PDF



Part Number IPP45N06S4L-08
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS-T2 Power-Transistor
Datasheet IPP45N06S4L-08 DatasheetIPP45N06S4L-08 Datasheet (PDF)

www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 7.9 45 V mΩ A Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L08.

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www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 7.9 45 V mΩ A Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N06L08 4N06L08 4N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22.5A T C=25°C Value 45 45 180 97 45 ±16 71 -55 ... +175 55/175/56 mJ A V W °C Unit A Rev. 1.0 page 1 2009-03-24 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=35µA V DS=60V, V GS=0V V DS=60V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS=0V V GS=4.5V, I D=22.5A V GS=4.5V, I D=22.5A, SMD version V GS=10 V, I D=45A V GS=10 V, I D=45A, SMD version 60 1.2 1.7 0.01 5 9.7 9.4 7.0 6.7 2.2 1 100 100 14 13.7 8.2 7.9 nA mΩ µA V 2.1 62 62 40 K/W Values typ. max. Unit Rev. 1.0 page 2 2009-03-24 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25°C V GS=0V, I F=45A, T j=25°C V R=30V, I F=45A, di F/dt =100A/µs 0.6 0.95 45 180 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=45A, V GS=0 to 10V 13 5 49 3.6 19 10 64 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30V, V GS=10V, I D=45A, R G=3.5Ω V GS=0V, V DS=25V, f =1MHz 3680 840 40 9 2 45 8 4780 1090 80 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 33 - ns Reverse recovery charge2) 1) Q rr - 32 - nC Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 71A at 25°C. Specified by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 6 V; SMD 80 70 50 40 60 50 30 P tot [W] 40 30 20 I D [A] 20 10 0 0 50 100 150 200 0 50 100 150 200 10 0 T C [°C] T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 µs 0.5 100 0.1 100 10 µs Z thJC [K/W] I D [A] 0.05 100 µs 10-1 0.01 10 10-2 1 ms single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2009-03-24 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 180 10 V 6V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 19 160 140 120 100 80 4V 4.5 V 5V 4V 4.5 V 5V 17 15 R DS(on) [mΩ] I D [A] 13 11 60 40 20 0 0 1 2 3 4 5 6 9 6V 7 10 V 5 0 30 60 90 120 150 180 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 180 -55 °C 25 °C 175 °C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 45 A; V GS = 10 V; SMD 14 160 140 120 12 R DS(on) [mΩ] 0 1 2 3 4 5 6 I D [A] 100 80 60 40 10 8 6 20 0 4 -60 -20 20 60 100 140 180 V GS [V] T j [°C] Rev. 1.0 page 5 2009-03-24 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS.


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