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C4007 Dataheets PDF



Part Number C4007
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description 2SC4007
Datasheet C4007 DatasheetC4007 Datasheet (PDF)

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitte.

  C4007   C4007


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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 100 V 80 V 6 V 4 A 6 A 40 W UNIT n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50μA; IE= 0 IC= 25mA; IB= 0 IE= 50μA; IC= 0 IC= 2A; IB= 0.2A B 2SC4007 MIN 100 80 6 TYP. MAX UNIT V V V 1.0 1.5 10 10 500 10 60 V V μA μA IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 6V; IC= 0 Current-Gain—Bandwidth Product Output Capacitance ‹ hFE classifications E F 160-320 w w G 250-500 s c s i . w IC= 1A ; VCE= 4V IE= -0.2A ; VCE= 12V IE=0 ; VCB= 10V; ftest= 1MHz n c . i m e 100 MHz pF 100-200 isc Website:www.iscsemi.cn 2 Datasheet pdf - http://www.DataSheet4U.net/ .


2SC4007 C4007 ATMEL89S52


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