2SB1503

Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 120 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1 2 3 A W ˚C ˚C B 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h E (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –7A IC = –7A, IB = –7mA IC = –7A, IB = –7mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –7A, IB1 = –7mA, IB2 =...