Power Transistors
2SB1502
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2275...
Power
Transistors
2SB1502
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2275
6.0
20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
26.0±0.5
10.0
s Features
q q q
Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V
1.5
2.0
4.0
1.5
Solder Dip
s
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –120 –100 –5 –8 –5 60 3.5 150 –55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1
2
3
A W ˚C ˚C
B
1:Base 2:Collector 3:Emitter TOP–3L Package
Internal Connection
C
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
E
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –120V, IE = 0 VCE = –100V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –4A IC = –4A, IB = –4mA IC = –4A, IB = –4mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –4A, IB1 = –4mA, IB2 = 4mA...
