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A1357 Dataheets PDF



Part Number A1357
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SA1357
Datasheet A1357 DatasheetA1357 Datasheet (PDF)

www.DataSheet.co.kr 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emi.

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www.DataSheet.co.kr 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −35 −20 −8 −5 −8 −1 1.5 10 150 −55 to 150 A Unit V V V JEDEC JEITA TOSHIBA ― ― 2-8H1A A W °C °C Weight: 0.82 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SA1357 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note 3) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = −35 V, IE = 0 VEB = −8 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −4 A IC = −4 A, IB = −0.1 A VCE = −2 V, IC = −4 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −20 100 70 ― ― ― ― Typ. ― ― ― ― ― ― ― 170 62 Max −100 −100 ― 320 ― −1.0 −1.5 ― ― V V MHz pF Unit μA μA V Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking Lot No. Characteristics indicator A1357 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 2 2006-11-09 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SA1357 IC – VCE −9 −8 −200 −150 −100 −70 −50 −30 −20 IB = −10 mA 10 −0.01 −0.03 −0.1 Common emitter Tc = 25°C 1000 500 300 hFE – IC Common emitter VCE = −2 V DC current gain hFE Tc = 100°C 25 −25 (A) Collector current IC −7 −6 −5 −4 −3 −2 −1 0 0 100 50 30 −0.3 −1 −3 −10 0 −1 −2 −3 −4 −5 −6 −7 Collector current IC (A) Collector-emitter voltage VCE (V) IC – VBE Common emitter VCE = −2 V VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) −3 Common emitter −1 −0.5 −0.3 Tc = 100°C 25 −0.1 −0.05 −0.03 −0.01 −0.03 −0.1 −0.3 −1 −3 −10 −25 IC/IB = 40 −9 −8 (A) Collector current IC −7 −6 −5 −4 −3 −2 −1 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 25 Tc = 100°C −25 Collector current IC (A) Base-emitter voltage VBE (V) Safe Operating Area −20 (A) −10 IC max (pulsed)* IC max (continuous) −5 −3 100 ms* 10 ms* Collector current IC DC operation Tc = 25°C −1 *: Single nonrepetitive pulse Tc = 25°C Duty cycle = 30% (max) Curves must be derated linearly with increase in temperature. −0.1 −1 −0.3 −3 VCEO max −10 −30 −0.5 −0.3 **: Pulse width = 10 ms (max) Collector-emitter voltage VCE (V) 3 2006-11-09 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SA1357 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial roboti.


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